SiC High-Current Module

CETC 55th Institute SiC high-current MOS modules feature easy-to-install packaging, extremely low thermal resistance, and excellent heat dissipation. Ideal for high-current, high power density applications. Available in SOT-227 packages.

Product Specifications

Project	Parameters
Model	WM2A016120T / WM2J004120T
Maximum Drain-Source Voltage	1200V
On-resistance	16mΩ / 4mΩ
Continuous Drain Current (25°C)	115A / 500A
Continuous Drain Current (100°C)	76A / 320A
Threshold Voltage	2.8V
Input Capacitor	4300pF / 1600 pF
Gate Charge	242nC / 960nC
Packaging Form	SOT-227

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