SiC Schottky Diode (650V~20000V)
CETC 55th Institute's SiC Schottky Barrier Diodes (SBD), fourth-generation products, deliver optimal performance in current density and surge current compared to leading international brands like Cree, Rohm, ST, and Onsemi. Features include low switching loss, zero reverse recovery, and high-temperature/high-voltage tolerance, making them ideal replacements for traditional Si fast-recovery diodes. Available in plastic packages (TO-252/TO-263/TO-220/TO-247/DFN, etc.), gold-sealed SMD series, and bare die options. Covers a full voltage range of 650V~20000V and current ratings from 1A to 200A. Ideal for photovoltaic inverters, new energy vehicles, switch-mode power supplies, and industrial variable-frequency drives.
Product Specifications
Project | Parameters |
Model Range | WS4A010065A / WS3A002120M / WS1A050065MC / WS4A100120QB, etc. |
Reverse Repetitive Peak Voltage | 650V / 1200V / 1700V / 3300V / 6500V / 10000V / 20000V |
Forward Current Range | 1A~200A |
Forward Voltage | On par with Cree, ST, and Onsemi; optimal VF×QC figure of merit |
Inrush Current Performance | The fourth-generation product offers a significant upgrade over older models and outperforms international competitors. |
Reverse Recovery Characteristics | Zero reverse recovery charge (significant advantage over Si-FRD) |
Package Type (Plastic) | TO-252 / TO-263 / TO-220 / TO-247-2 / TO-247-3 / TO-263-6 / DFN 8×8 |
Package Type (Gold) | SMD-0.1 / SMD-0.5 / SMD-1 / SMD-2G / TO-254 |
Operating Junction Temperature | -55℃~+175℃ |
Special Specifications | High-current, high-temperature, or ultra-high-voltage diodes available |
Pricing Details
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