SiC MOSFET 650V Series
CETC 55 Institute's SiC MOSFET 650V Series features a planar process with fully validated reliability. Designed to replace imported products and achieve domestic substitution, it offers the most comprehensive product lineup in China. With fast switching speeds, low on-resistance, and excellent high-temperature performance, this series supports multiple package options including plastic (DFN, TOLL, TO-252, TO-263, SOT-223, etc.), metal cans (SMD series), and bare die. Ideal for applications such as PV inverters, EV onboard chargers (OBC), charging stations, switch-mode power supplies, and industrial variable frequency drives.
Product Specifications
Project | Parameters |
Model Range | WM2J060065WA / WM2A060065E / WM2J030065MC / WM2A017065MD, etc. |
Maximum Drain-Source Voltage | 650V |
On-resistance range | 5 mΩ~60 mΩ |
Continuous Drain Current | 29A~323A（25℃） |
Recommended Gate Voltage | -4V/+18V |
Threshold Voltage | 2.8V (typical) |
Typical gate charge | 50nC (60mΩ) ~ 251.8nC (9mΩ) |
Packaging Form | DFN 5×6 / DFN 8×8 / TOLL / TO-252 / TO-263-2 / TO-263-7 / SMD-0.2 / SMD-0.5 / SMD-1, etc. |
Operating Junction Temperature | -55℃~+175℃ |
Pricing Details
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