SiC Ultra-High-Voltage MOSFET (3300V~10000V)
CETC 55th Institute's SiC super-high-voltage MOSFETs feature high single-chip voltage ratings and fast switching speeds. Compared to IGBTs, they reduce volume, weight, and power losses by over 90%. Ideal for high-voltage power supplies, module packaging, rail transit, and high-voltage transmission applications. Available in 3300V, 6500V, 10000V, and other specifications.
Product Specifications
Project | Parameters |
Model Range | WM2J050330B (3300V) / WM1A160650B (6500V) / WM1A50010KB (10000V) |
Maximum Drain-Source Voltage | 3300V / 6500V / 10000V |
On-resistance | 50mΩ / 160mΩ / 500mΩ |
Continuous Drain Current (25°C) | 68A / 25A / 10A |
Recommended Gate Voltage | -4/+18V or -5/+20V |
Body diode voltage drop | 3.9V / 6.5V, etc. |
Operating Junction Temperature | 175℃ |
Application Scenarios | High-Voltage Power Supply / Module Packaging / Rail Transit / High-Voltage Power Transmission |
Pricing Details
Product price is negotiable and determined by order quantity, configuration requirements, and delivery terms.
Submit an inquiry using the form below. Our expert team will provide a detailed quote within 24 hours.
Product Details
Can't find the right product?
Contact our expert team for customized solutions tailored to your specific needs.
Contact Us